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...RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs. Features: • Gain: 14.5 dB • Power...
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...RF Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency operation - Low output noise - Low distortion - Wide temperature range - Long-term stability Specifications: - Package: SMD 3-pin - Output Power: 150W - Frequency Range: 500MHz - 860MHz - Operating Temperature: -45°C to +85°C - Gain: 28.5dB - Efficiency: 53% - Power...
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...RF Power Transistor Product Features: - Wideband operation from 0.1 to 6.0 GHz - High Gain: 15.5 dB at 0.9 GHz - High Output Power: 19.5 dBm at 0.9 GHz - Low Noise Figure: 2.6 dB at 0.9 GHz - High Power Added Efficiency: 34% at 0.9 GHz - High Output IP3: +27 dBm at 0.9 GHz - Low DC Power...
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