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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Product Details
Brand Name: Original brand
Model Number: BSZ037N06LS5ATMA1
Certification: Original
Place of Origin: Original
Minimum Order: 5000pcs
Price: Negotiation
Payment Terms: T/T
Supply Ability: 100000pcs
Delivery Time: 2-3days
Packaging Details: 5000pcs
Continuous Leakage Current: 65 A
Installation: Through Hole
Package: TO-247-3
Transistor Polarity: N-Channel
Channel Pattern: Enhancement
Pd-Power Dissipation: 446 W
Vds-Leakage source breakdown electric shock: 650 V
Verfied Supplier
Shenzhen Weitaixu Capacitor Co.,Ltd [ Shenzhen, China ] Active Member
Business Type:Distributor/Wholesaler
Agent
Exporter
Trading Company
Seller
Brands:Samsung, Murata, Yageo, TDK, AVX, KEMET, etc
Employee Number:50~100
Annual Sales:11 Million-20 Million
  Supplier`s last login times: within 48 hours
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Mosfet Power Transistor