Gate-Emitter Leakage Current :: | 400 nA |
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Product Category :: | IGBT Transistors |
Mounting Style :: | Through Hole |
Continuous Collector Current at 25 C :: | 60 A |
Pd - Power Dissipation :: | 176 W |
Collector- Emitter Voltage VCEO Max :: | 600 V |
Package / Case :: | TO-3PN |
Maximum Operating Temperature :: | + 175 C |
Maximum Gate Emitter Voltage :: | 30 V |
Packaging :: | Tube |
Configuration :: | Single |
Collector-Emitter Saturation Voltage :: | 1.8 V |
Manufacturer :: | Fairchild Semiconductor |
Business Type: | Manufacturer Distributor/Wholesaler Agent Importer Exporter Trading Company |
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Employee Number: | 600~800 |
Supplier`s last login times: within 26 hours |