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Buy From China Factory! |
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Buy From China Factory! |
| Gate-Emitter Leakage Current :: | +/- 400 nA |
|---|---|
| Product Category :: | IGBT Transistors |
| Mounting Style :: | Through Hole |
| Continuous Collector Current at 25 C :: | 120 A |
| Pd - Power Dissipation :: | 306 W |
| Collector- Emitter Voltage VCEO Max :: | 650 V |
| Package / Case :: | TO-3PN |
| Maximum Operating Temperature :: | + 175 C |
| Maximum Gate Emitter Voltage :: | +/- 20 V |
| Packaging :: | Tube |
| Configuration :: | Single |
| Collector-Emitter Saturation Voltage :: | 1.8 V |
| Manufacturer :: | Fairchild Semiconductor |
| Description: | IGBT Transistors 650V FS Gen3 Trench IGBT |
| Business Type: | Manufacturer Distributor/Wholesaler Agent Importer Exporter Trading Company |
|---|---|
| Employee Number: | 600~800 |
| Supplier`s last login times: within 26 hours |
