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...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 25V Vgs (Max) - FET Feature - Power Dissipation (Max) 50W...
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...50W Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistanceof the DPAK package, this device is well suited forhigh current load applications. FET Type P-Channel Technology MOSFET...
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