high voltage mosfet

.... This type of MOSFET is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power supply. High Voltage MOSFETs are designed for superior performance, with advanced thermal management and

... MAX Typ Typ CS5N50A2 TO-220F N 5 500 ±30 2 4 1510 1600 15 545 Product Description: The Gate-Source Voltage (Vgs) of this MOSFET is ±30V, which makes it easy to control the device and ensures safe operation. This MOSFET is of the N

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss...

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss...

... Body Diode for Improved Switching Performance 6. Very Low On-Resistance for Minimized Conduction Loss 7. Fast Switching Speed for Improved System Efficiency 8. High Maximum Drain-Source Voltage for

IRFZ44N - The Ultimate Power MOSFET for Electronics Enthusiasts Discover the Pros and Cons of the IRFZ44N and Empower Your Projects Today Are you an electronics enthusiast looking for a high-performance MOSFET transistor? Look no further than the IRFZ44N...

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

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... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

...MOSFET N-CH Si 30V 1.2A 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process Technology HEXFET Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 30 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage...

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

...High Speed High Side MOSFET Driver SOIC-8 MIC5021YM MIC5021YN Manufacturer: Microchip Product Type: Door Drivers Product: MOSFET Gate Drivers Type: High-Side Installation style: SMD/SMT Package/Case: SOIC-8 Driver Quantity: 1 Driver Number of outputs: 1 Output Supply Voltage - Min: 12 V Supply Voltage...

... Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain ...

...high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...